APTGT75SK120T1G APTGT75SK120T1G ? rev 0 august, 2007 www.microsemi.com 1 ? 5 7 cr1 cr2 8 12 4 3 ntc 12 56 q1 11 pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 110 i c continuous collector current t c = 80c 75 i cm pulsed collector current t c = 25c 175 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 357 w rbsoa reverse bias safe operating area t j = 125c 150a @ 1150v these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com application ? ac and dc motor control ? switched mode power supplies features ? fast trench + field stop igbt ? technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant buck chopper fast trench + field stop igbt ? power module v ces = 1200v i c = 75a @ tc = 80c
APTGT75SK120T1G APTGT75SK120T1G ? rev 0 august, 2007 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 75a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 3 ma 5.0 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 5340 c oes output capacitance 280 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 240 pf t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 75a r g = 4.7 ? 70 ns t d(on) turn-on delay time 285 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 75a r g = 4.7 ? 90 ns e on turn-on switching energy t j = 125c 7 e off turn-off switching energy v ge = 15v v bus = 600v i c = 75a r g = 4.7 ? t j = 125c 8.1 mj chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 100 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 100a t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 9 q rr reverse recovery charge t j = 125c 18 c t j = 25c 5 e r reverse recovery energy i f = 100a v r = 600v di/dt =2000a/s t j = 125c 9 mj
APTGT75SK120T1G APTGT75SK120T1G ? rev 0 august, 2007 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.35 r thjc junction to case thermal resistance diode 0.48 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT75SK120T1G APTGT75SK120T1G ? rev 0 august, 2007 www.microsemi.com 4 ? 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 150 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 25 50 75 100 125 150 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er er 0 2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 i c (a) e (mj) v ce = 600v v ge = 15v r g = 4.7 ? t j = 125c eon eoff eoff er 0 2 4 6 8 10 12 14 16 0 4 8 121620242832 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 75a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 150 175 0 400 800 1200 1600 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT75SK120T1G APTGT75SK120T1G ? rev 0 august, 2007 www.microsemi.com 5 ? 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 0 20 40 60 80 100 120 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impe dance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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